型号:

STD2NK60Z-1

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 600V 1.4A IPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STD2NK60Z-1 PDF
其它有关文件 STD2NK60Z-1 View All Specifications
标准包装 75
系列 SuperMESH™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 1.4A
开态Rds(最大)@ Id, Vgs @ 25° C 8 欧姆 @ 700mA,10V
Id 时的 Vgs(th)(最大) 4.5V @ 50µA
闸电荷(Qg) @ Vgs 10nC @ 10V
输入电容 (Ciss) @ Vds 170pF @ 25V
功率 - 最大 45W
安装类型 通孔
封装/外壳 TO-251-3 长引线,IPak,TO-251AB
供应商设备封装 I-Pak
包装 管件
其它名称 497-12555-5
STD2NK60Z-1-ND
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